20MT120UFP Vishay, 20MT120UFP Datasheet - Page 7

• Manufacturer Part Number: 20MT120UFP
• Description: 1200V FULL BRIDGE ULTRAFAST (8-60KHz) NPT IGBT MTP
• Manufacturer: Vishay

Specifications of 20MT120UFP

• Maximum Operating Temperature: + 150 C
• Length: 63.5 mm
• Width: 33 mm
• Height: 16 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Package / Case: Low Profile
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94505
Revision: 01-Mar-10
V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
CC
40
35
30
25
20
15
10
= 400 V; V
0
0
V
Fig. 20 - Typical Diode Q
CC
Fig. 19 - Typical Diode I
200
= 400 V; V
0.0001
0.001
200
0.01
50Ω
0.1
1
GE
1E-006
400
= 15 V; I
D = 0.50
30Ω
di F /dt (A/μs)
di F /dt (A/μs)
400
GE
0.05
0.10
0.02
0.01
0.20
600
= 15 V; T
Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
CE
SINGLE PULSE
( THERMAL RESPONSE )
10 Ω
1E-005
600
= 5.0 A; T
800
rr
rr
10A
J
For technical questions, contact:
vs. dI
vs. dI
= 150 °C
5.0 Ω
800
1000
20A
F
J
F
30A
/dt
/dt
= 150 °C
0.0001
(Ultrafast NPT IGBT), 40 A
1200
1000
"Full Bridge" IGBT MTP
t 1 , Rectangular Pulse Duration (sec)
0.001
[e-mail]
0.01
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci= i/Ri
10000
R
1000
1
100
R
16
14
12
10
10
1
8
6
4
2
0
τ
2
0
0
R
τ
0.1
2
Fig. 21 - Typical Capacitance vs. V
Fig. 22 - Typical Gate Charge vs. V
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
2
R
2
Vishay High Power Products
R
τ
3
3
R
τ
3
3
40
Q G , Total Gate Charge (nC)
20
I
CE
τ
V
C
τ
GE
Ri (°C/W) τi (sec)
= 5.0 A; L = 600 μH
0.161
0.210
0.147
= 0 V; f = 1 MHz
1
80
40
V CE (V)
0.000759
0.017991
0.06094
120
60
20MT120UFP
Cies
Coes
Cres
10
160
80
600V
CE
GE
www.vishay.com
200
100
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