2N5461-E3 Vishay, 2N5461-E3 Datasheet - Page 5

• Manufacturer Part Number: 2N5461-E3
• Description: TRANSISTOR,JFET,P-Channel,9mA I(DSS),TO-92
• Manufacturer: Vishay

Specifications of 2N5461-E3

• Breakdown Voltage Vbr: 40V
• Gate-source Cutoff Voltage Vgs(off) Max: 7.5V
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Continuous Drain Current Id: -9mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 70262
S-04030—Rev. D, 04-Jun-01
100
100
10
10
80
60
40
20
1
8
6
4
2
0
0
10
–0.01
0
Equivalent Input Noise Voltage vs. Frequency
A
Assume V
f = 1 MHz
V
V
Circuit Voltage Gain vs. Drain Current
DS
Common-Source Input Capacitance
V
+
GS(off)
= –15 V
1 ) R
4
100
g
V
DD
vs. Gate-Source Voltage
= 3 V
fs
GS
R
= –15 V, V
I
L
D
– Gate-Source Voltage (V)
–5 V
L
g
– Drain Current (mA)
f – Frequency (Hz)
os
V
8
GS(off)
–0.1
I
DS
1 k
D
I
= –0.1 mA
D
= 1.5 V
= –5 V
R
–15 V
= –1 mA
L
12
+
10 V
I
D
10 k
16
_
100 k
–1
20
2.5
0.1
10
20
16
12
5
0
1
8
4
0
Common-Source Reverse Feedback Capacitance
–0.1
–0.1
0
Common-Source Forward Transconductance
f = 1 MHz
V
V
Output Conductance vs. Drain Current
GS(off)
GS(off)
T
A
= –55_C
= 3 V
4
= 3 V
V
vs. Gate-Source Voltage
GS
125_C
25_C
2N/SST5460 Series
I
I
D
D
– Gate-Source Voltage (V)
vs. Drain Current
– Drain Current (mA)
– Drain Current (mA)
T
–5 V
A
8
= –55_C
125_C
–1
–1
Vishay Siliconix
–15 V
12
V
f = 1 kHz
V
f = 1 kHz
DS
DS
25_C
= –15 V
= –15 V
16
www.vishay.com
–10
–10
20
9-5