80RIA120PBF Vishay, 80RIA120PBF Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
80RIA120PBF
Manufacturer Part Number
80RIA120PBF
Description
SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),80A I(T),TO-209varM12
Manufacturer
Vishay
Datasheet
1.80RIA40.pdf
(7 pages)
Specifications of 80RIA120PBF
Breakover Current Ibo Max
1990 A
Rated Repetitive Off-state Voltage Vdrm
1200 V
Off-state Leakage Current @ Vdrm Idrm
15 mA
Forward Voltage Drop
1.6 V
Gate Trigger Voltage (vgt)
2.5 V
Maximum Gate Peak Inverse Voltage
10 V
Gate Trigger Current (igt)
120 mA
Holding Current (ih Max)
200 mA
Mounting Style
Stud
Package / Case
TO-94
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document Number: 94392
Revision: 17-Sep-10
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Mounting torque, ± 10 %
Approximate weight
Case style
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series
SYMBOL
SYMBOL
+ V
P
- V
R
R
P
T
V
V
I
G(AV)
I
I
T
thCS
GM
thJC
GD
GT
Stg
GM
GD
GT
Phase Control Thyristors
GM
J
GM
(Stud Version), 80 A
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Lubricated threads
See dimensions - link at the end of datasheet
T
T
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
J
J
= T
= T
= T
= T
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
J
J
J
J
maximum
maximum, t
maximum, f = 50 Hz, d% = 50
maximum, t
TEST CONDITIONS
TEST CONDITIONS
p
p
Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 6 V anode
to cathode applied
Maximum gate current/voltage not to
trigger is the maximum value which
will not trigger any unit with rated
V
5 ms
5 ms
DRM
DiodesEurope@vishay.com
anode to cathode applied
Vishay Semiconductors
- 40 to 125
- 40 to 150
VALUES
VALUES
TO-209AC (TO-94)
(137)
(120)
0.30
15.5
0.25
130
270
120
3.5
2.5
1.5
0.1
12
20
10
60
14
3
3
6
www.vishay.com
(lbf · in)
UNITS
UNITS
N · m
K/W
mA
mA
°C
W
A
g
V
V
V
3