80RIA120PBF Vishay, 80RIA120PBF Datasheet - Page 5
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80RIA120PBF
Manufacturer Part Number
80RIA120PBF
Description
SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),80A I(T),TO-209varM12
Manufacturer
Vishay
Datasheet
1.80RIA40.pdf
(7 pages)
Specifications of 80RIA120PBF
Breakover Current Ibo Max
1990 A
Rated Repetitive Off-state Voltage Vdrm
1200 V
Off-state Leakage Current @ Vdrm Idrm
15 mA
Forward Voltage Drop
1.6 V
Gate Trigger Voltage (vgt)
2.5 V
Maximum Gate Peak Inverse Voltage
10 V
Gate Trigger Current (igt)
120 mA
Holding Current (ih Max)
200 mA
Mounting Style
Stud
Package / Case
TO-94
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document Number: 94392
Revision: 17-Sep-10
Fig. 5 - Maximum Non-Repetitive Surge Current
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
1800
1600
1400
1200
1000
800
1
At Any Rated Load Condition And With
Rated V
80R IA S eries
RRM
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
180
160
140
120
100
Applied Following Surge.
80
60
40
20
For technical questions within your region, please contact one of the following:
0
0
10
RMS Limit
at 60 Hz 0.0083 s
Initial T
at 50 Hz 0.0100 s
20
Average On-state Current (A)
180°
120°
DC
90°
60°
30°
J
40
= 125°C
10000
1000
80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series
Fig. 7 - On-State Voltage Drop Characteristics
60
100
Fig. 4 - On-State Power Loss Characteristics
10
1
100
0.5
Phase Control Thyristors
80
Conduc tion Period
Instantaneous On-state Voltage (V)
1
(Stud Version), 80 A
80RIA S eries
T = 125°C
J
100 120 140
1.5
2
T = 25°C
T = 125°C
J
J
2.5
0
Maximum Allowable Ambient T emperature (°C)
3
80RIA Series
3.5
25
4
50
4.5
Fig. 6 - Maximum Non-Repetitive Surge Current
2000
1900
1800
1700
1600
1500
1400
1300
1200
1100
1000
DiodesEurope@vishay.com
900
800
700
0.01
5
Of Conduction May Not Be Maintained.
Maximum Non Repetitive Surge Current
75
80RIA S eries
Versus Pulse Train Duration. Control
Puls e T rain Duration (s)
100
Vishay Semiconductors
125
No Voltage Reapplied
Rated V
0.1
Initial T = 125°C
RRM
Reapplied
J
www.vishay.com
1
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