CM150DU-12F Powerex Inc, CM150DU-12F Datasheet - Page 2

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CM150DU-12F

Manufacturer Part Number
CM150DU-12F
Description
IGBT Module
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM150DU-12F

Transistor Polarity
N Channel
Power Dissipation Pd
520W
Collector Emitter Voltage V(br)ceo
600V
Continuous Collector Current Ic
150A
Collector Emitter Saturation Voltage Vce(sat)
2.2V
Current Rating
150A
Igbt Type
Trench
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 150A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
41nF @ 10V
Power - Max
520W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM150DU-12F
Manufacturer:
IDT
Quantity:
1 001
Part Number:
CM150DU-12F
Manufacturer:
MITSUBISHI
Quantity:
26
Part Number:
CM150DU-12F
Quantity:
55
2
2
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150DU-12F
Trench Gate Design Dual IGBTMOD™
150 Amperes/600 Volts
Absolute Maximum Ratings, T j = 25°C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T c = 25°C)
Peak Collector Current
Emitter Current** (T c = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T c = 25°C, T j ≤ 150°C)
Mounting Torque, M5 Main Terminal
Mounting Torque, M5 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Static Electrical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
V CE(sat)
V GE(th)
Symbol
I CES
I GES
V EC
Q G
V CC = 300V, I C = 150A, V GE = 15V
I C = 150A, V GE = 15V, T j = 125°C
I C = 150A, V GE = 15V, T j = 25°C
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
I C = 15mA, V CE = 10V
I E = 150A, V GE = 0V
Test Conditions
Symbol
V CES
V GES
T stg
V iso
I CM
I EM
P c
I C
I E
T j
CM150DU-12F
Min.
-40 to 150
-40 to 125
5
2500
300*
600
±20
150
150
300*
520
310
40
40
930
Typ.
6
1.6
1.6
20
Max.
1
7
2.2
2.6
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Units
Volts
Volts
Volts
Units
in-lb
in-lb
°C
°C
Volts
Volts
Volts
Volts
mA
nC
μA

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