CM150DU-12F Powerex Inc, CM150DU-12F Datasheet - Page 3

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CM150DU-12F

Manufacturer Part Number
CM150DU-12F
Description
IGBT Module
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM150DU-12F

Transistor Polarity
N Channel
Power Dissipation Pd
520W
Collector Emitter Voltage V(br)ceo
600V
Continuous Collector Current Ic
150A
Collector Emitter Saturation Voltage Vce(sat)
2.2V
Current Rating
150A
Igbt Type
Trench
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 150A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
41nF @ 10V
Power - Max
520W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM150DU-12F
Manufacturer:
IDT
Quantity:
1 001
Part Number:
CM150DU-12F
Manufacturer:
MITSUBISHI
Quantity:
26
Part Number:
CM150DU-12F
Quantity:
55
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150DU-12F
Trench Gate Design Dual IGBTMOD™
150 Amperes/600 Volts
Dynamic Electrical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Times
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
R th(j-c) 'Q
R th(j-c) Q
R th(j-c) D
R th(c-f)
Symbol
Symbol
t d(on)
t d(off)
C oes
C ies
C res
Q rr
t rr
t r
t f
Per Module, Thermal Grease Applied
Per FWDi 1/2 Module, T c Reference
Per IGBT 1/2 Module, T c Reference
T c Reference Point Under Chip
Point per Outline Drawing
Point per Outline Drawing
V CC = 300V, I C = 150A,
V CE = 10V, V GE = 0V
Per IGBT 1/2 Module,
V GE1 = V GE2 = 15V,
Switching Operation
Inductive Load
Test Conditions
R G = 4.2,
I E = 150A
Test Conditions
Min.
Min.
Typ.
Typ.
2.8
0.16
0.035
120
100
350
250
150
41
Max.
Max.
2.7
1.5
0.24
0.47
Units
Units
°C/W
°C/W
°C/W
°C/W
μC
ns
ns
ns
ns
ns
nf
nf
nf
3

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