CM150DY-24NF Powerex Inc, CM150DY-24NF Datasheet - Page 3

• Manufacturer Part Number: CM150DY-24NF
• Description: IGBT Module
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM150DY-24NF

• Power Dissipation Pd: 780W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Continuous Collector Current Ic: 150A
• Collector Emitter Saturation Voltage Vce(sat): 2.5V
• Current Rating: 150A
• Voltage Rating: 1.2kV
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 35nF @ 10V
• Power - Max: 780W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Prx Availability: RequestQuote
• Distributorinventory: View
• Voltage: 1200V
• Current: 150A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA504
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2B-3015
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM150DY-24NF
Dual IGBTMOD™ NF-Series Module
150 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
300
250
200
150
100
10
10
10
50
0
3
2
1
0
0
V
COLLECTOR-EMITTER VOLTAGE, V
EMITTER-COLLECTOR VOLTAGE, V
GE
20V
=
FORWARD CHARACTERISTICS
OUTPUT CHARACTERISTICS
T
T
2
1
j
j
= 25°C
= 125°C
FREE-WHEEL DIODE
15
(TYPICAL)
(TYPICAL)
2
4
13
12
6
3
CE
EC
T
, (VOLTS)
, (VOLTS)
j
8
4
= 25
11
10
9
o
C
10
5
R
R
R
Symbol
R
th(j-c)
th(j-c)
th(j-c)
th(c-f)
R
10
G
10
10
10
-1
0
4
3
2
1
2
1
0
'Q
10
Q
D
SATURATION VOLTAGE CHARACTERISTICS
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
V
j
GE
GE
COLLECTOR-CURRENT, I
= 25 C unless otherwise specified
Per 1/2 Module, Thermal Grease Applied
50
= 15V
= 0V
T
T
Per FWDi 1/2 Module, T
Per IGBT 1/2 Module, T
j
j
CAPACITANCE VS. V CE
COLLECTOR-EMITTER
= 25°C
= 125°C
T
C
100
10
Point per Outline Drawing
Point per Outline Drawing
Reference Point Under Chips
0
(TYPICAL)
(TYPICAL)
Per IGBT 1/2 Module,
150
Test Conditions
200
C
10
, (AMPERES)
1
C
C
C
CE
oes
res
ies
250
, (VOLTS)
C
C
Reference
300
Reference
10
2
10
10
10
10
10
8
6
4
2
0
3
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
6
T
1
Min.
2.1
j
—
—
—
—
= 25°C
GATE-EMITTER VOLTAGE, V
COLLECTOR CURRENT, I
SWITCHING CHARACTERISTICS
8
COLLECTOR-EMITTER
10
HALF-BRIDGE
0.07
Typ.
—
—
—
—
(TYPICAL)
(TYPICAL)
12
10
I
I
I
C
C
C
t
2
d(off)
= 300A
= 150A
14
= 60A
t
f
t
t
C
0.093
d(on)
Max.
r
V
V
R
T
Inductive Load
0.16
0.25
, (AMPERES)
j
—
21
CC
GE
G
GE
16
= 125°C
= 2.1
, (VOLTS)
= 600V
= ±15V
18
Units
C/W
C/W
C/W
C/W
10
20
3
3