CM150DY-24NF Powerex Inc, CM150DY-24NF Datasheet - Page 4

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CM150DY-24NF

Manufacturer Part Number
CM150DY-24NF
Description
IGBT Module
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet

Specifications of CM150DY-24NF

Power Dissipation Pd
780W
Collector Emitter Voltage V(br)ceo
1.2kV
Continuous Collector Current Ic
150A
Collector Emitter Saturation Voltage Vce(sat)
2.5V
Current Rating
150A
Voltage Rating
1.2kV
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 150A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
35nF @ 10V
Power - Max
780W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Prx Availability
RequestQuote
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Voltage
1200V
Current
150A
Circuit Configuration
Dual
Rohs Compliant
Yes
Recommended Gate Driver
VLA504
Recommended Dc To Dc Converter
VLA106-15242 or VLA106-24242
Interface Circuit Ref Design
BG2B-3015
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM150DY-24NF
Manufacturer:
MITSUBISHI
Quantity:
228
Part Number:
CM150DY-24NF
Manufacturer:
MITSUBISHI/三菱
Quantity:
20 000
Part Number:
CM150DY-24NF
Quantity:
55
Part Number:
CM150DY-24NF#300G
Manufacturer:
MITSUBISH
Quantity:
1 000
4
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150DY-24NF
Dual IGBTMOD™ NF-Series Module
150 Amperes/1200 Volts
10
10
10
10
10
10
3
2
1
2
1
0
10
10
REVERSE RECOVERY CHARACTERISTICS
1
0
V
V
R
T
Inductive Load
j
CC
GE
G
= 25°C
= 2.1
GATE RESISTANCE (TYPICAL)
EMITTER CURRENT, I
= 600V
= ±15V
GATE RESISTANCE, R
SWITCHING LOSS VS.
(TYPICAL)
10
10
2
1
E
V
V
I
T
Inductive Load
C Snubber at Bus
C
, (AMPERES)
j
CC
GE
= 125°C
= 150A
G
= 600V
= ±15V
, ( )
E
E
SW(on)
SW(off)
I
t
rr
rr
10
10
3
2
10
10
10
3
2
1
10
10
10
10
20
16
12
8
4
0
-1
-2
-3
0
10
0
-3
I
Single Pulse
T
Per Unit Base =
R
R
C
200 400 600
C
IMPEDANCE CHARACTERISTICS
th(j-c)
th(j-c)
= 150A
0.16°C/W
(IGBT)
0.25°C/W
(FWDi)
= 25°C
10
GATE CHARGE VS. V GE
=
=
TRANSIENT THERMAL
GATE CHARGE, Q
-2
(IGBT & FWDi)
V
TIME, (s)
CC
10
10
= 400V
800
-1
-5
G
, (nC)
1000 1200
V
10
10
CC
-4
0
= 600V
1400
10
10
-3
1
10
10
10
-1
-2
-3
10
10
10
2
1
0
10
1
V
V
R
T
Inductive Load
C Snubber at Bus
j
CC
GE
G
COLLECTOR CURRENT (TYPICAL)
= 125°C
COLLECTOR CURRENT, I
= 2.1
= 600V
= ±15V
SWITCHING LOSS VS.
10
2
C
, (AMPERES)
E
E
SW(on)
SW(off)
10
3

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