SI1926DL-T1-E3 Vishay
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
SI1926DL-T1-E3
Manufacturer Part Number
SI1926DL-T1-E3
Description
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,370mA I(D),SOT-363
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI1926DL-T1-E3
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.4 Ohm @ 340mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
370mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 10V
Input Capacitance (ciss) @ Vds
18.5pF @ 30V
Power - Max
510mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI1926DL-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1926DL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000