SI1926DL Vishay Siliconix, SI1926DL Datasheet
SI1926DL
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SI1926DL Summary of contents
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... SC-70 (6-LEADS Top View Ordering Information: Si1926DL-T1-E3 (Lead (Pb)-free) Si1926DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation ...
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... Si1926DL Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance Forward Transconductance b Dynamic Input Capacitance ...
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... V thru 1.5 2.0 2.5 3 0.3 0.4 0.5 0.6 0.7 - Drain Current ( 0.6 0.9 1.2 Gate Charge Si1926DL Vishay Siliconix 0.4 0.3 0 ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics Curves vs. Temperature iss 16 C oss 8 ...
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... Si1926DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 T = 150 °C A 100 10 1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.0 1.8 1.6 1.4 1.2 1 Temperature (°C) J Threshold Voltage www.vishay.com °C A 0.9 1.2 1 250 µ 100 125 150 1 Limited DS(on) 0 ...
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... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73684 S10-0792-Rev. D, 05-Apr-10 75 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si1926DL Vishay Siliconix 0.5 0.4 0.3 0.2 0.1 0 ...
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... Si1926DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...
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... - - Document Number: 71154 06-Jul-01 Package Information Vishay Siliconix Dim Min Nom Max A 0.90 – 1.10 A – – 0. 0.80 – 1. 0.15 – 0.30 c 0.10 – 0.25 D 1.80 2.00 2.20 E 1.80 2.10 2.40 E 1.15 1.25 1. 0.65BSC e 1.20 1.30 1. 0.10 0.20 0.30 L 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 ...
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... MOSFETs in the SC-70 package. These new Vishay Siliconix devices are intended for small-signal applications where a miniaturized package is needed and low levels of current (around 250 mA) need to be switched, either directly or by using a level shift configuration. Vishay provides these devices with a range of on-resistance specifications in 6-pin versions ...
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... AN814 Vishay Siliconix SC-70 (6-PIN) Room Ambient J(max 150 400 312 mW D NOTE: Although they are intended for low-power applications, devices in the 6-pin SC-70 will handle power dissipation in excess of 0.2 W. Testing To aid comparison further, Figure 2 illustrates the dual-channel SC-70 thermal performance on two different board sizes and two different pad patterns ...
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... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead Return to Index Return to Index www.vishay.com 18 0.067 (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72602 Revision: 21-Jan-08 Datasheet pdf - http://www.DataSheet4U.net/ ...
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... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...