SI4154DY-T1-GE3 Vishay, SI4154DY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4154DY-T1-GE3
• Description: N-CHANNEL 40-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4154DY-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 4230pF @ 20V
• Power - Max: 7.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0033 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 75 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 24 A
• Power Dissipation: 3500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4154DY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 65000
S09-0998-Rev. A, 01-Jun-09
0.0045
0.0040
0.0035
0.0030
0.0025
0.0020
70
56
42
28
14
10
On-Resistance vs. Drain Current and Gate Voltage
0
8
6
4
2
0
0.0
0.0
0
I
V
D
GS
V
= 20 A
V
GS
GS
14.4
0.5
= 4.5 V
14
V
= 10 V
= 10 V thru 4 V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
I
D
- Total Gate Charge (nC)
V
Gate Charge
- Drain Current (A)
28.8
1.0
28
DS
= 10 V
V
DS
43.2
1.5
42
V
= 20 V
DS
V
GS
= 30 V
= 3 V
57.6
2.0
56
New Product
72.0
2.5
70
5500
4400
3300
2200
1100
2.0
1.7
1.4
1.1
0.8
0.5
10
8
6
4
2
0
0
- 50
0
0
C
rss
On-Resistance vs. Junction Temperature
- 25
I
T
D
C
T
= 15 A
= 125 °C
C
1
6
= 25 °C
V
V
Transfer Characteristics
GS
DS
0
T
J
C
C
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
iss
oss
Capacitance
25
12
2
50
V
T
C
GS
Vishay Siliconix
= - 55 °C
= 10 V
18
3
75
Si4154DY
100
V
www.vishay.com
GS
24
4
= 4.5 V
125
150
30
5
3