SI4411DY-T1-E3 Vishay, SI4411DY-T1-E3 Datasheet
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SI4411DY-T1-E3
Manufacturer Part Number
SI4411DY-T1-E3
Description
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,9A I(D),SO
Manufacturer
Vishay
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4411DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4411DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72149
S09-0767-Rev. D, 04-May-09
Ordering Information: Si4411DY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 30
(V)
G
S
S
S
1
2
3
4
Si4411DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.0155 at V
0.010 at V
T op V i e w
R
SO-8
DS(on)
J
a
= 150 °C)
a
GS
GS
(Ω)
= - 10 V
= - 4.5 V
P-Channel 30-V (D-S) MOSFET
8
7
6
5
a
D
D
D
D
a
A
= 25 °C, unless otherwise noted
I
Steady State
Steady State
D
- 13
- 10
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
• Notebook
Symbol
Symbol
T
G
R
R
J
Definition
- Load Switch
- Battery Switch
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
P-Channel MOSFET
stg
D
S
®
Power MOSFET
Typical
- 10.5
- 2.7
10 s
- 13
3.0
1.9
33
70
16
- 55 to 150
± 20
- 30
- 50
Steady State
Maximum
- 1.36
- 7.5
0.95
1.5
- 9
42
85
21
Vishay Siliconix
Si4411DY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1