SI4411DY Vishay Semiconductors, SI4411DY Datasheet
SI4411DY
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SI4411DY Summary of contents
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... 4 SO Top View Ordering Information: Si4411DY Si4411DY-T1 (with tape and reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current continuous Source Current (Diode Conduction) ...
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... Si4411DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...
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... S-03539—Rev. B, 24-Mar-03 New Product 5500 4400 3300 2200 1100 0.030 0.024 0.018 0.012 T = 25_C J 0.006 0.000 0.8 1.0 1.2 Si4411DY Vishay Siliconix Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 1.4 1 ...
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... Si4411DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0 250 mA D 0.4 0.2 0.0 - 0 Temperature (_C) J Limited by r Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product 100 125 150 ...
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... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72149 S-03539—Rev. B, 24-Mar-03 New Product Normalized Thermal Transient Impedance, Junction-to-Foot -2 10 Square Wave Pulse Duration (sec) Si4411DY Vishay Siliconix - www.vishay.com 5 ...