SI4455DY-T1-E3 Vishay, SI4455DY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4455DY-T1-E3
• Description: P-CHANNEL 150-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4455DY-T1-E3

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.295 Ohms
• Drain-source Breakdown Voltage: - 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 50 C
• Lead Free Status / Rohs Status: Details

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68631
S09-0393-Rev. B, 09-Mar-09
8.0
6.4
4.8
3.2
1.6
0.0
0
25
Power, Junction-to-Foot
D
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
100
4
3
2
1
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
125
25
150
New Product
T
C
50
Current Derating*
- Case Temperature (°C)
75
100
2.0
1.6
1.2
0.8
0.4
0.0
0
125
25
Power, Junction-to-Ambient
T
150
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
Si4455DY
125
www.vishay.com
150
5