SI4455DY-T1-E3 Vishay, SI4455DY-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI4455DY-T1-E3
• Description: P-CHANNEL 150-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4455DY-T1-E3

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.295 Ohms
• Drain-source Breakdown Voltage: - 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 50 C
• Lead Free Status / Rohs Status: Details

Si4455DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.01
0.1
0.1
1
www.vishay.com/ppg?68631.
1
10
10
-4
-4
0.2
0.05
Duty Cycle = 0.5
0.02
0.1
0.2
0.1
Duty Cycle = 0.5
10
-3
Single Pulse
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
0.02
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
0.05
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
1
t
1
A
S09-0393-Rev. B, 09-Mar-09
= P
t
2
100
Document Number: 68631
DM
Z
thJA
thJA
t
t
1
2
(t)
= 80 ° C/W
1000
10