SI4561DY-T1-E3 Vishay, SI4561DY-T1-E3 Datasheet

SI4561DY-T1-E3

Manufacturer Part Number

SI4561DY-T1-E3

Description

TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,40V V(BR)DSS,7.2A I(D),SO

Manufacturer

Vishay

Datasheets

1.SI4561DY.pdf (12 pages)

2.SI4561DY-T1-E3.pdf (15 pages)

Specifications of SI4561DY-T1-E3

Configuration

Dual Dual Drain

Transistor Polarity

N and P-Channel

Resistance Drain-source Rds (on)

0.0355 Ohms, 0.035 Ohms

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

5.6 A

Power Dissipation

2 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOIC-8 Narrow

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI4561DY-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

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Notes:

a. Based on T

b. Surface Mounted on 1" x 1" FR4 Board.

c. t = 10 s.

d. Maximum under Steady State conditions is 120 °C/W.

Document Number: 69730

S-80109-Rev. B, 21-Jan-08

N-Channel

P-Channel

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Source-Drain Current Diode Current

Pulsed Source-Drain Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain)

PRODUCT SUMMARY

Ordering Information: Si4561DY-T1-E3 (Lead (Pb)-free)

= 25 °C.

- 40

(V)

0.0425 at V

0.047 at V

0.0355 at V

0.035 at V

Top View

N- and P-Channel 40-V (D-S) MOSFET

SO-8

DS(on)

= 150 °C)

b, d

(Ω)

= - 4.5 V

= - 10 V

= 4.5 V

= 10 V

- 7.2

- 6.2

6.8

6.2

(A)

= 25 °C, unless otherwise noted

Steady State

L = 0 1 mH

(Typ.)

t ≤ 10 s

New Product

5.3

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

Symbol

FEATURES

APPLICATIONS

• TrenchFET

• Backlight Inverter for LCD Display

, T

thJA

thJF

stg

N-Channel MOSFET

Typ.

N-Channel

1.25

5.6

4.4

1.6

2.0

Power MOSFET

2.45

6.8

5.4

2.5

3.0

1.9

b, c

Max.

- 55 to 150

± 20

P-Channel MOSFET

Typ.

P-Channel

- 5.6

- 4.4

- 1.6

Vishay Siliconix

1.25

2.0

11.25

- 7.2

- 5.7

- 2.5

2.10

- 40

- 20

3.3

b, c

Si4561DY

Max.

62.5

www.vishay.com

RoHS

COMPLIANT

°C/W

Unit

°C

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