SI4836DY-T1-E3 Vishay, SI4836DY-T1-E3 Datasheet

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SI4836DY-T1-E3

Manufacturer Part Number
SI4836DY-T1-E3
Description
TRANSISTOR,MOSFET,N-CHANNEL,12V V(BR)DSS,17A I(D),SO
Manufacturer
Vishay
Datasheet

Specifications of SI4836DY-T1-E3

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0031 Ohms
Gate Charge Qg
75 nC
Forward Transconductance Gfs (max / Min)
80 S
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.9 A
Power Dissipation
3.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4836DY-T1-E3
Manufacturer:
NXP
Quantity:
500
Part Number:
SI4836DY-T1-E3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SI4836DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71692
S09-0221-Rev. E, 09-Feb-09
Ordering Information: Si4836DY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
12
(V)
G
S
S
S
Si4836DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
0.003 at V
0.004 at V
0.005 at V
R
Top View
SO-8
DS(on)
J
a
= 150 °C)
a
GS
GS
GS
(Ω)
= 4.5 V
= 2.5 V
= 1.8 V
N-Channel 12-V (D-S) MOSFET
8
7
6
5
a
D
D
D
D
a
A
I
D
= 25 °C, unless otherwise noted
25
22
19
(A)
Steady State
Steady State
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• PWM Optimized
• 100 % R
• Low Voltage Synchronous Rectification
• Low Voltage LDO Pass Transistor
Symbol
Symbol
T
R
R
J
Available
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
10 s
2.9
3.5
2.2
25
20
29
67
13
G
N-Channel MOSFET
- 55 to 150
± 8
12
60
Steady State
D
S
Maximum
1.3
1.6
17
13
35
80
16
Vishay Siliconix
1
Si4836DY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4836DY-T1-E3 Summary of contents

Page 1

... SO Top View Ordering Information: Si4836DY-T1-E3 (Lead (Pb)-free) Si4836DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4836DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71692 S09-0221-Rev. E, 09-Feb °C 0.8 1.0 1.2 Si4836DY Vishay Siliconix 8000 C 6400 iss 4800 C oss 3200 1600 C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1.0 0.8 ...

Page 4

... Si4836DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.2 0.0 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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