SI4920DY-T1 Vishay, SI4920DY-T1 Datasheet - Page 2

• Manufacturer Part Number: SI4920DY-T1
• Description: TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,6.9A I(D),SO
• Manufacturer: Vishay

Si4920DY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2-2
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
b
Parameter
a
a
a
a
a
_
Symbol
V
r
r
I
DS(
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
Q
g
R
t
t
SD
t
rr
fs
gs
gd
r
gt
f
g
g
)
V
V
V
I
DS
DS
D
DS
DS
^ 1 A, V
I
= 15 V, V
V
F
= 30 V, V
= 15 V, V
V
V
V
DS
V
V
V
V
V
= 1.7 A, di/dt = 100 A/ms
I
DS
Test Condition
DS
GS
S
DS
GS
DD
DD
DS
= 0 V, V
= 1.7 A, V
= V
w 5 V, V
= 4.5 V, I
= 30 V, V
= 10 V, I
= 15 V, I
,
= 15 V, R
= 15 V, R
GEN
f = 1 MHz
GS
GS
GS
GS
GS
, I
= 10 V, R
GS
= 0 V, T
= 10 V, I
= 5V, I
D
GS
D
GS
D
D
GS
L
L
= 250 mA
= " 20 V
= 6.9 A
= 6.9 A
= 5.8 A
= 15 W
= 15 W
= 10 V
= 0 V
= 0 V
,
J
D
D
D
G
= 55 _C
= 6.9 A
= 6.9 A
= 6 W
Min
20
1
0.020
0.026
Typ
7.5
3.5
25
15
30
12
10
60
15
50
S-52637—Rev. D, 02-Jan-06
2
Document Number: 70667
" 100
Max
0.025
0.035
1.2
25
23
50
20
20
90
30
90
1
3
Unit
nC
nC
nA
mA
mA
ns
W
W
W
V
A
S
V