SI5419DU-T1-GE3 Vishay

SI5419DU-T1-GE3

Manufacturer Part Number

SI5419DU-T1-GE3

Description

P-CHANNEL 30-V (D-S) MOSFET

Manufacturer

Vishay

Series

TrenchFET®r

Specifications of SI5419DU-T1-GE3

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

20 mOhm @ 6.6A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

12A

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

45nC @ 10V

Input Capacitance (ciss) @ Vds

1400pF @ 15V

Power - Max

31W

Mounting Type

Surface Mount

Package / Case

8-PowerPak® ChipFet

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.02 Ohms

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

9.9 A

Power Dissipation

3.1 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SI5419DU-T1-GE3TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

H&T Electronics

Part Number:

SI5419DU-T1-GE3

Quantity:

2 684

Company:

H&T Electronics

Part Number:

SI5419DU-T1-GE3

Quantity:

70 000

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