SI5441BDC-T1-E3 Vishay, SI5441BDC-T1-E3 Datasheet - Page 3

TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,4.4A I(D),CHIP

SI5441BDC-T1-E3

Manufacturer Part Number
SI5441BDC-T1-E3
Description
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,4.4A I(D),CHIP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI5441BDC-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 4.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.4A
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 4.5V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
1206-8 ChipFET™
Minimum Operating Temperature
- 55 C
Configuration
Single Hex Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.08 Ohm @ 2.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.4 A
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI5441BDC-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5441BDC-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI5441BDC-T1-E3
Quantity:
70 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73207
S-83054-Rev. B, 29-Dec-08
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
V
D
DS
GS
Source-Drain Diode Forward Voltage
= 6.1 A
On-Resistance vs. Drain Current
0.2
= 10 V
= 2.5 V
3
4
V
SD
Q
g
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
0.4
I
D
Gate Charge
- Drain Current (A)
6
8
T
0.6
J
= 150 °C
12
9
0.8
V
V
T
GS
GS
12
16
J
= 25 °C
1.0
= 3.6 V
= 4.5 V
15
1.2
20
1200
1000
0.12
0.10
0.08
0.06
0.04
0.02
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
C
D
- 25
C
GS
rss
= 6.1 A
iss
= 4.5 V
4
1
V
V
T
DS
0
GS
C
J
oss
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
8
2
50
Vishay Siliconix
I
D
Si5441BDC
= 6.1 A
12
3
75
www.vishay.com
100
16
4
125
150
20
5
3

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