SI5441BDC-T1-E3 Vishay, SI5441BDC-T1-E3 Datasheet - Page 5

TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,4.4A I(D),CHIP

SI5441BDC-T1-E3

Manufacturer Part Number
SI5441BDC-T1-E3
Description
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,4.4A I(D),CHIP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI5441BDC-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 4.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.4A
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 4.5V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
1206-8 ChipFET™
Minimum Operating Temperature
- 55 C
Configuration
Single Hex Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.08 Ohm @ 2.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.4 A
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI5441BDC-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5441BDC-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI5441BDC-T1-E3
Quantity:
70 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73207.
Document Number: 73207
S-83054-Rev. B, 29-Dec-08
0.01
0.1
2
1
10
0.02
-4
0.05
0.1
Duty Cycle = 0.5
0.2
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si5441BDC
www.vishay.com
10
5

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