SI7129DN-T1-GE3 Vishay, SI7129DN-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7129DN-T1-GE3
• Description: P-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI7129DN-T1-GE3

• Minimum Operating Temperature: - 50 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0114 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 37 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14.4 A
• Power Dissipation: 3800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 68966
S10-2023-Rev. B, 06-Sep-10
0.030
0.025
0.020
0.015
0.010
0.005
0.000
60
45
30
15
10
0
8
6
4
2
0
On-Resistance vs. Drain Current and Gate Voltage
0
0
0
V
10
GS
10
3
V
= 10 V thru 5 V
V
DS
Output Characteristics
DS
Q
- Drain-to-Source Voltage (V)
g
= 15 V, I
20
I
- Total Gate Charge (nC)
D
- Drain Current (A)
Gate Charge
20
6
V
GS
D
30
= 14.4 A
= 4.5 V
V
DS
V
9
30
= 24 V, I
GS
40
= 10 V
4 V
D
12
= 14.4 A
40
50
15
50
60
3600
3000
2400
1800
1200
600
1.2
0.9
0.6
0.3
0.0
1.8
1.5
1.2
0.9
0.6
0
- 50
0
0
I
D
On-Resistance vs. Junction Temperature
C
= 14.4 A
- 25
rss
6
V
V
1
T
Transfer Characteristics
0
GS -
DS
J
- Junction Temperature (ºC)
- Drain-Source Voltage (V)
Gate-to-Source Voltage (V)
25 ºC
Capacitance
25
12
V
GS
50
2
125 ºC
Vishay Siliconix
= 10 V
18
75
C
Si7129DN
V
C
iss
GS
oss
100
3
www.vishay.com
= 4.5 V
24
- 55 ºC
125
150
4
30
3