SI7129DN-T1-GE3 Vishay, SI7129DN-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI7129DN-T1-GE3
• Description: P-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI7129DN-T1-GE3

• Minimum Operating Temperature: - 50 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0114 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 37 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14.4 A
• Power Dissipation: 3800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si7129DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.01
0.1
0.1
1
www.vishay.com/ppg?68966.
1
10
10
-4
-4
0.2
0.1
Duty Cycle = 0.5
Duty Cycle = 0.5
0.1
Single Pulse
0.2
0.05
0.02
0.02
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
Single Pulse
-3
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
-2
1
1
0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
P
DM
-1
JM
- T
t
A
1
S10-2023-Rev. B, 06-Sep-10
= P
t
2
Document Number: 68966
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 50 °C/W
1
0
0
0
1