SI7326DN-T1-E3 Vishay, SI7326DN-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7326DN-T1-E3
• Description: N-CH 30-V (D-S) FAST SWITCHING MOSFE
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74444
S-62439-Rev. A, 27-Nov-06
0.040
0.032
0.024
0.016
0.008
0.000
50
10
1
6
5
4
3
2
1
0
0.0
0
0
Source-Drain Diode Forward Voltage
0.2
5
V
I
On-Resistance vs. Drain Current
D
DS
2
= 9 A
V
SD
= 15 V
Q
V
g
- Source-to-Drain Voltage (V)
GS
0.4
10
- Total Gate Charge (nC)
I
Gate Charge
= 4.5 V
D
T
4
- Drain Current (A)
J
= 150 °C
0.6
15
6
0.8
20
V
GS
T
= 10 V
J
= 25 °C
8
25
1.0
30
1.2
10
1200
1000
0.06
0.05
0.04
0.03
0.02
0.01
0.00
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
C
= 9 A
rss
= 10 V
4
2
T
0
V
V
J
GS
DS
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
8
4
I
C
D
C
50
oss
= 9 A
Vishay Siliconix
iss
12
6
75
Si7326DN
www.vishay.com
100
16
8
125
150
20
10
3