SI8435DB-T1-E1 Vishay, SI8435DB-T1-E1 Datasheet - Page 3

• Manufacturer Part Number: SI8435DB-T1-E1
• Description: P CH MOSFET, -20V, 10A, MICRO FOOT
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI8435DB-T1-E1

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -10A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: -1V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 41 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 5V
• Input Capacitance (ciss) @ Vds: 1600pF @ 10V
• Power - Max: 6.25W
• Mounting Type: Surface Mount
• Package / Case: 4-MICRO FOOT®CSP
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.041 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 5 V
• Continuous Drain Current: 6.72 A
• Power Dissipation: 2.78 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI8435DB-T1-E1TR

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS T
Document Number: 73559
S-82119-Rev. D, 08-Sep-08
SPECIFICATIONS T
Parameter
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
15
12
9
6
3
0
0.0
0.6
V
DS
Output Characteristics
- Drain-to-Source Voltage (V)
V
1.2
GS
J
= 5 V thru 2 V
= 25 °C, unless otherwise noted
1.8
Symbol
V
V
I
Q
SM
I
t
t
t
GS
V
SD
S
rr
a
b
rr
GS
= 1.5 V
= 10 V
A
2.4
= 25 °C, unless otherwise noted
I
F
= - 1 A, dI/dt = 100 A/µs, T
3.0
I
S
Test Conditions
= - 1 A, V
T
C
= 25 °C
GS
= 0 V
J
= 25 °C
6
5
4
3
2
1
0
0.0
0.3
Min.
V
Transfer Characteristics
GS
- Gate-to-Source Voltage (V)
0.6
Typ.
116
203
0.6
45
71
Vishay Siliconix
0.9
Si8435DB
- 5.21
Max.
- 15
174
305
1.2
www.vishay.com
1.2
Unit
nC
ns
ns
A
V
1.5
3