SI8435DB-T1-E1 Vishay, SI8435DB-T1-E1 Datasheet - Page 7

• Manufacturer Part Number: SI8435DB-T1-E1
• Description: P CH MOSFET, -20V, 10A, MICRO FOOT
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI8435DB-T1-E1

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -10A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: -1V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 41 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 5V
• Input Capacitance (ciss) @ Vds: 1600pF @ 10V
• Power - Max: 6.25W
• Mounting Type: Surface Mount
• Package / Case: 4-MICRO FOOT®CSP
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.041 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 5 V
• Continuous Drain Current: 6.72 A
• Power Dissipation: 2.78 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI8435DB-T1-E1TR

PACKAGE OUTLINE
MICRO FOOT: 4-BUMP (2 x 2, 0.8 mm PITCH)
Notes (Unless Otherwise Specified):
1. Laser mark on the silicon die back, coated with a thin metal.
2. Bumps are Sn/Ag/Cu.
3. Non-solder mask defined copper landing pad.
4. The flat side of wafers is oriented at the bottom.
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73559.
Document Number: 73559
S-82119-Rev. D, 08-Sep-08
Dim.
A
A
A
D
b
E
e
S
1
2
e
Recommended Land
Mark on Backside of Die
X X X
8435
e
0.600
0.260
0.340
0.370
1.520
1.520
0.750
0.370
Min.
Millimeters
Note 3
Solder Mask ∅ ~ 0.40
4 x ∅ 0.30 ~ 0.31
a
b Diameter
A
0.650
0.290
0.360
0.410
1.600
1.600
0.850
0.380
Max.
A
A
2
1
E
Silicon
D
e
0.0236
0.0102
0.0134
0.0146
0.0598
0.0598
0.0295
0.0146
Min.
S
Inches
Bump Note 2
Vishay Siliconix
S
e
Si8435DB
www.vishay.com
0.0256
0.0114
0.0142
0.0161
0.0630
0.0630
0.0335
0.0150
Max.
7