SIR164DP-T1-GE3 Vishay, SIR164DP-T1-GE3 Datasheet

N-CHANNEL 30-V (D-S) MOSFET

SIR164DP-T1-GE3

Manufacturer Part Number
SIR164DP-T1-GE3
Description
N-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SIR164DP-T1-GE3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
123nC @ 10V
Input Capacitance (ciss) @ Vds
3950pF @ 15V
Power - Max
69W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
2.05mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
SOIC
Rohs Compliant
Yes
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0025 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
33.3 A
Power Dissipation
5.2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SIR164DP-T1-GE3TR

Available stocks

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Manufacturer:
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Quantity:
9 000
Part Number:
SIR164DP-T1-GE3
Manufacturer:
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Quantity:
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Part Number:
SIR164DP-T1-GE3
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10 000
Part Number:
SIR164DP-T1-GE3
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Quantity:
20 000
Part Number:
SIR164DP-T1-GE3
0
Company:
Part Number:
SIR164DP-T1-GE3
Quantity:
150
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 65 °C/W.
e. Package limited.
f. See Solder Profile (
g. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 64827
S09-0701-Rev. A, 27-Apr-09
Ordering Information: SiR164DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
30
(V)
8
6.15 mm
D
7
C
D
= 25 °C.
0.0032 at V
6
0.0025 at V
D
PowerPAK SO-8
Bottom View
5
www.vishay.com/ppg?73257
R
D
DS(on)
GS
GS
J
1
(Ω)
= 150 °C)
= 4.5 V
S
= 10 V
b, d
2
S
N-Channel 30-V (D-S) MOSFET
3
S
5.15 mm
4
I
D
G
(A)
50
50
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
Steady State
a, e
f, g
t ≤ 10 s
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
40.6 nC
g
(Typ.)
New Product
Symbol
R
R
thJC
thJA
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
GS
DS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New MOSFET Technology Optimized for
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• DC/DC
• Notebook CPU Core
Definition
Ringing Reduction in Switching Application
Typical
1.2
19
g
and UIS Tested
®
Gen III Power MOSFET
- 55 to 150
33.3
26.5
4.7
5.2
3.3
Limit
± 20
44.4
260
50
50
50
30
70
40
80
69
b, c
b, c
b, c
e
e
e
b, c
b, c
Maximum
1.8
24
Vishay Siliconix
G
N-Channel MOSFET
SiR164DP
www.vishay.com
D
S
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SIR164DP-T1-GE3 Summary of contents

Page 1

... Bottom View Ordering Information: SiR164DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SiR164DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Document Number: 64827 S09-0701-Rev. A, 27-Apr-09 New Product 1.5 2.0 2.5 5200 4160 3120 2080 1040 1.8 1.6 1.4 1 1.0 0.8 0 SiR164DP Vishay Siliconix ° 125 ° °C C 0.0 0.8 1.6 2.4 3 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance I ...

Page 4

... SiR164DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0.2 - 0 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.012 0.010 0.008 °C J 0.006 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.5 2.0 1.5 1.0 0.5 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiR164DP Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com ...

Page 6

... SiR164DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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