SIR164DP-T1-GE3 Vishay, SIR164DP-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIR164DP-T1-GE3
• Description: N-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIR164DP-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 123nC @ 10V
• Input Capacitance (ciss) @ Vds: 3950pF @ 15V
• Power - Max: 69W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 2.05mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0025 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 33.3 A
• Power Dissipation: 5.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIR164DP-T1-GE3TR

SiR164DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.01
0.1
0.1
1
www.vishay.com/ppg?64827.
1
10
10
-4
-4
0.05
0.02
Single Pulse
0.2
0.1
0.1
0.2
Duty Cycle = 0.5
Duty Cycle = 0.5
0.02
10
-3
10
Single Pulse
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.05
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
= P
S09-0701-Rev. A, 27-Apr-09
t
2
Document Number: 64827
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 65 °C/W
1000
1
0