SIR836DP-T1-GE3 Vishay

SIR836DP-T1-GE3

Manufacturer Part Number

SIR836DP-T1-GE3

Description

N-Ch PowerPAK SO-8 BWL 40V 19mohm@10V

Manufacturer

Vishay

Series

TrenchFET®r

Specifications of SIR836DP-T1-GE3

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

19 mOhm @ 10A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

21A

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

18nC @ 10V

Input Capacitance (ciss) @ Vds

600pF @ 20V

Power - Max

15.6W

Mounting Type

Surface Mount

Package / Case

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SIR836DP-T1-GE3TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SIR836DP-T1-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

SIR836DP-T1-GE3

Company:

H&T Electronics

Part Number:

SIR836DP-T1-GE3

Quantity:

Company:

H&T Electronics

Part Number:

SIR836DP-T1-GE3

Quantity:

70 000

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