sir836dp Vishay, sir836dp Datasheet

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sir836dp

Manufacturer Part Number
sir836dp
Description
N-channel 40-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
sir836dp-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
sir836dp-T1-GE3
0
Company:
Part Number:
sir836dp-T1-GE3
Quantity:
40
Company:
Part Number:
sir836dp-T1-GE3
Quantity:
70 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 70 °C/W.
e. Package limited.
f. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
g. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 65543
S10-0040-Rev. A, 11-Jan-10
Ordering Information: SiR836DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
40
(V)
8
6.15 mm
D
7
C
D
= 25 °C.
0.0225 at V
6
0.019 at V
D
PowerPAK SO-8
Bottom View
5
R
D
DS(on)
GS
GS
J
1
(Ω)
= 150 °C)
= 10 V
= 4.5 V
S
b, d
2
S
N-Channel 40-V (D-S) MOSFET
3
S
5.15 mm
4
I
D
G
19.6
(A)
21
Steady State
a, e
f, g
t ≤ 10 s
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
5.8 nC
g
(Typ.)
Symbol
R
R
thJC
thJA
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
GS
DS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• POL
• Synchronous Rectification
Definition
Typical
6.4
27
g
and UIS Tested
®
Power MOSFET
- 55 to 150
10.6
8.5
3.5
3.9
2.5
Limit
± 20
15.6
260
40
21
17
50
14
10
10
5
b, c
b, c
b, c
b, c
b, c
Maximum
G
8.0
32
Vishay Siliconix
N-Channel MOSFET
SiR836DP
D
S
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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sir836dp Summary of contents

Page 1

... Bottom View Ordering Information: SiR836DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ...

Page 2

... SiR836DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... S10-0040-Rev. A, 11-Jan- 1.5 2.0 2.5 800 640 480 320 160 2.0 1.7 1 1.1 0.8 0.5 7.5 10.0 12.5 SiR836DP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...

Page 4

... SiR836DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.3 0.1 - 0.1 - 0.3 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.080 0.064 0.048 = 25 °C J 0.032 0.016 0.000 0.8 1.0 1.2 200 160 120 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.5 2.0 1.5 1.0 0.5 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiR836DP Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... SiR836DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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