SIR874DP-T1-GE3 Vishay, SIR874DP-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIR874DP-T1-GE3
• Description: N-CHANNEL 25-V(D-S) MOSFET
• Manufacturer: Vishay

Specifications of SIR874DP-T1-GE3

• Gate Charge Qg: 27 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.012 Ohms
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 20 A
• Power Dissipation: 29.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SiR874DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64813.
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.05
0.1
0.2
0.02
Duty Cycle = 0.5
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
10
Single Pulse
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-- T
t
1
1
A
S09-0663-Rev. A, 20-Apr-09
= P
t
2
Document Number: 64813
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 70 °C/W
1000
1
0