SIS412DN-T1-GE3 Vishay, SIS412DN-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIS412DN-T1-GE3
• Description: N-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIS412DN-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 435pF @ 15V
• Power - Max: 15.6W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.024 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.7 A
• Power Dissipation: 3200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: PowerPAK
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIS412DN-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69006
S09-0135-Rev. C, 02-Feb-09
0.035
0.030
0.025
0.020
0.015
0.010
30
25
20
15
10
10
5
0
8
6
4
2
0
0.0
0
0
I
On-Resistance vs. Drain Current
D
0.5
= 7.8 A
5
V
DS
V
V
Output Characteristics
2
V
GS
GS
Q
DS
- Drain-to-Source Voltage (V)
g
1.0
I
10
= 4.5 V
= 10 V
V
D
- Total Gate Charge (nC)
= 15 V
Gate Charge
GS
- Drain Current (A)
= 10 thru 4 V
1.5
15
4
2.0
20
V
DS
V
6
= 24 V
GS
2.5
25
= 3 V
New Product
3.0
30
8
600
500
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
rss
I
- 25
D
= 7.8 A
0.5
5
V
C
V
C
DS
Transfer Characteristics
iss
GS
T
0
oss
J
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
1.0
10
Capacitance
25
T
C
= 125 °C
1.5
15
50
T
C
Vishay Siliconix
= 25 °C
V
GS
75
SiS412DN
2.0
= 10 V
20
100
www.vishay.com
V
GS
T
2.5
C
25
= 4.5 V
125
= - 55 °C
150
3.0
30
3