SIS412DN-T1-GE3 Vishay, SIS412DN-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIS412DN-T1-GE3
• Description: N-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIS412DN-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 435pF @ 15V
• Power - Max: 15.6W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.024 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.7 A
• Power Dissipation: 3200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: PowerPAK
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIS412DN-T1-GE3TR

SiS412DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
T
= 150 °C
0.4
I
D
J
25
- Temperature (°C)
= 250 µA
0.6
50
75
0.8
0.01
100
0.1
10
100
1
T
0.1
J
= 25 °C
Safe Operating Area, Junction-to-Ambient
* V
1.0
Limited by R
Single Pulse
125
T
GS
A
= 25 °C
> minimum V
V
New Product
150
DS
1.2
- Drain-to-Source Voltage (V)
DS(on)
1
*
GS
at which R
BVDSS Limited
DS(on)
10
0.08
0.06
0.04
0.02
50
40
30
20
10
0
0.001
0
is specified
0
1s
10 s
DC
On-Resistance vs. Gate-to-Source Voltage
100 µs
1 ms
10 ms
100 ms
I
D
= 7.8 A
0.01
100
2
V
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
0.1
4
Time (s)
S09-0135-Rev. C, 02-Feb-09
1
Document Number: 69006
6
10
T
T
J
J
= 125 °C
8
= 25 °C
100
1000
10