ST650C24L1 Vishay, ST650C24L1 Datasheet - Page 3

• Manufacturer Part Number: ST650C24L1
• Description: SILICON CONTROLLED RECTIFIER,2.4kV V(DRM),790A I(T),TO-200AC
• Manufacturer: Vishay

Specifications of ST650C24L1

• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 93738
Switching
Triggering
Blocking
t
t
di/dt
V
I
V
q
P
P
I
+V
-V
I
d
dv/dt
I
I
GM
GT
GD
DRM
RRM
GD
GT
GM
G(AV)
GM
GM
DC gate voltage not to trigger
Maximum peak gate power
Maximum average gate power
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
DC gate current required
to trigger
DC gate voltage required
to trigger
DC gate current not to trigger
Parameter
Parameter
Typical delay time
Typical turn-off time
Parameter
Max. non-repetitive rate of rise
of turned-on current
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
TYP.
200
100
2.5
1.8
1.1
50
ST650C..L
ST650C..L
ST650C..L
1000
0.25
200
10.0
1.0
500
2.0
3.0
5.0
10
80
20
MAX.
200
3.0
-
-
-
-
Units Conditions
A/µs
Units Conditions
Units Conditions
V/µs
mA
µs
mA
mA
W
V
V
A
V
Gate drive 20V, 20Ω, t
T
Gate current 1A, di
V
I
dv/dt = 20V/µs, Gate 0V 100Ω, t
T
T
T
T
T
T
T
T
T
T
T
T
T
TM
J
J
J
J
J
J
J
J
J
J
d
J
J
J
J
= T
= T
= T
= T
= - 40°C
= 25°C
= 125°C
= - 40°C
= 25°C
= 125°C
= T
= T
= T
= 0.67% V
= T
= 750A, T
J
J
J
J
J
J
J
J
max, anode voltage ≤ 80% V
max, t
max, f = 50Hz, d% = 50
max, t
max, t
max
max. linear to 80% rated V
max, rated V
J
DRM
p
p
p
= T
≤ 5ms
≤ 5ms
≤ 5ms
, T
J
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
Bulletin I25203 rev. B 04/00
g
max, di/dt = 60A/µs, V
J
DRM
/dt = 1A/µs
DRM
ST650C..L Series
= 25°C
r
≤ 1µs
anode-to-cathode applied
/V
RRM
applied
p
www.vishay.com
= 500µs
DRM
DRM
R
= 50V
3