ST650C24L1 Vishay, ST650C24L1 Datasheet - Page 7

• Manufacturer Part Number: ST650C24L1
• Description: SILICON CONTROLLED RECTIFIER,2.4kV V(DRM),790A I(T),TO-200AC
• Manufacturer: Vishay

Specifications of ST650C24L1

• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 93738
0 .0 0 1
0 .0 1
1 0 0
0 .1
0 . 1
1 0
0 .0 0 1
0 .0 0 1
1
a ) R e c o m m e n d e d lo a d lin e f o r
b ) Re c o m m e n d e d lo a d lin e fo r
Re c t a n g u la r g a t e p ulse
St e a d y St a te V a lu e
R
( Sin gle Sid e C o o le d)
R
( D o u ble Sid e C o o le d )
( D C O p e ra t io n )
t r< = 1 µ s
< = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s
ra t e d d i/ dt : 2 0 V , 1 0 o h m s; t r<= 1 µ s
thJ-hs
thJ-hs
= 0 .0 7 3 K/ W
= 0 .0 3 1 K/ W
V G D
10000
0 .0 1
1000
IG D
100
Fig. 10 - Thermal Impedance Z
Fig. 9 - On-state Voltage Drop Characteristics
0 .0 1
0. 5
Instan tan eous O n -stat e V oltage (V )
S q ua re W a v e P u lse D u ra t io n ( s)
Fig. 11 - Gate Characteristics
In st a n t an e o us G a t e C u rre n t ( A )
1
T = 25°C
J
0 .1
ST 6 5 0 C ..L Se rie s
1.5
( b )
0 .1
ST650C..L Series
2
( a )
thJ-hs
ST 6 5 0 C ..L Se rie s
1
T = 125°C
J
F re q u e n c y L im ite d b y P G ( A V )
Characteristics
2.5
( 1 ) PG M = 1 0 W , tp = 4 m s
( 2 ) PG M = 2 0 W , tp = 2 m s
( 3 ) PG M = 4 0 W , tp = 1 m s
( 4 ) PG M = 6 0 W , tp = 0 .6 6 m s
3
1
1 0
( 1 )
Bulletin I25203 rev. B 04/00
ST650C..L Series
( 2 )
( 3 )
( 4 )
1 0 0
1 0
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