SUD50N02-06P-E3 Vishay, SUD50N02-06P-E3 Datasheet - Page 2

• Manufacturer Part Number: SUD50N02-06P-E3
• Description: TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,26A I(D),TO-252AA
• Manufacturer: Vishay

Specifications of SUD50N02-06P-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.006 Ohm @ 10 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 26 A
• Power Dissipation: 6800 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Fall Time: 9 ns
• Rise Time: 10 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUD50N02-06P
Vishay Siliconix
Notes
a.
b.
c.
www.vishay.com
2
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain Source On State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristic (T
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Guaranteed by design, not subject to production testing.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Independent of operating temperature.
160
140
120
100
c
c
80
60
40
20
0
a
0
Parameter
c
c
c
c
c
b
b
V
2
DS
V
b
GS
Output Characteristics
− Drain-to-Source Voltage (V)
= 10 thru 5 V
b
J
4
= 25_C UNLESS OTHERWISE NOTED)
6
Symbol
V
V
r
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
C
GS(th)
I
I
C
V
D(on)
C
Q
Q
d(off)
GSS
d(on)
I
DSS
DSS
g
Q
R
SM
t
oss
t
t
SD
iss
rss
rr
fs
gs
gd
r
f
g
g
8
4 V
3 V
2 V
C
10
V
I
V
V
V
D
V
= 25_C)
GS
DS
DS
DS
GS
^ 50 A, V
= 0 V, V
I
= 20 V, V
= 10 V, V
V
= 10 V, I
F
V
V
V
V
V
V
V
DS
V
V
10 V, V
= 50 A, di/dt = 100 A/ms
DS
I
Test Condition
GS
DD
DD
DS
DS
GS
F
GS
DS
= 0 V, V
= 50 A, V
= V
= 10 V, R
= 10 V, R
= 0 V, I
= 20 V, V
= 5 V, V
= 4.5 V, I
= 10 V, I
= 15 V, I
DS
GEN
D
GS
GS
GS
GS
= 10 V, f = 1 MHz
= 20 A, T
, I
= 10 V, R
= 0 V, T
GS
= 4.5 V, I
D
D
GS
GS
D
4.5 V, I
= 250 mA
D
L
L
GS
D
= 250 mA
= "20 V
= 20 A
= 0.2 W
= 0.2 W
= 20 A
= 20 A
= 10 V
= 0 V
= 0 V
J
J
G
= 125_C
= 125_C
D
D
100
= 2.5 W
80
60
40
20
= 50 A
0
50 A
0.0
0.5
V
1.0
GS
Transfer Characteristics
− Gate-to-Source Voltage (V)
Min
1.5
0.8
0.5
20
50
15
25_C
T
2.0
C
= 125_C
0.0046
0.0073
Typ
2550
900
415
7.5
6.0
1.5
1.2
19
11
10
24
35
2.5
9
S-32425—Rev. C, 24-Nov-03
a
Document Number: 71931
3.0
−55_C
0.0084
0.0095
"100
Max
0.006
100
3.0
2.4
1.5
50
30
20
15
35
15
70
3.5
1
4.0
Unit
nC
nC
nA
mA
mA
pF
p
ns
ns
ns
W
W
W
V
V
A
S
A
V
4.5