SUD50P04-13L-E3 Vishay, SUD50P04-13L-E3 Datasheet - Page 4

• Manufacturer Part Number: SUD50P04-13L-E3
• Description: TRANSISTOR,MOSFET,P-CHANNEL,40V V(BR)DSS,60A I(D),TO-252AA
• Manufacturer: Vishay

Specifications of SUD50P04-13L-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.013 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 93700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUD50P04-13L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
THERMAL RATINGS
www.vishay.com
4
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.01
75
60
45
30
15
0.1
0
- 50 - 25
2
1
0
10
- 4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
V
I
On-Resistance vs. Junction Temperature
Limited By Package
D
GS
= 30 A
25
Maximum Avalanche Drain Current
= 10 V
Single Pulse
T
0
J
T
50
C
- Junction Temperature (°C)
vs. Case Temperature
- Case Temperature (°C)
25
10
- 3
75
50
75
100
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
10
125
- 2
125
150
150
Square Wave Pulse Duration (sec)
New Product
175
175
10
- 1
200
100
0.1
10
100
1
0.1
1
10
1
0
Limited by r
V
Source-Drain Diode Forward Voltage
DS
0.3
V
T
Single Pulse
SD
DS(on)
J
T
- Drain-to-Source Voltage (V)
= 150 °C
C
10
1
- Source-to-Drain Voltage (V)
= 25 °C
Safe Operating Area
0.6
S-71660-Rev. B, 06-Aug-07
0.9
10
Document Number: 73009
100
T
J
= 25 °C
1.2
10 µs
100 µs
1 ms
10 ms
100 ms
DC
100
1 K
1.5