SUD50P04-13L-E3 Vishay, SUD50P04-13L-E3 Datasheet - Page 5
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SUD50P04-13L-E3
Manufacturer Part Number
SUD50P04-13L-E3
Description
TRANSISTOR,MOSFET,P-CHANNEL,40V V(BR)DSS,60A I(D),TO-252AA
Manufacturer
Vishay
Datasheet
1.SUD50P04-13L-E3.pdf
(6 pages)
Specifications of SUD50P04-13L-E3
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.013 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
60 A
Power Dissipation
93700 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see
Document Number: 73009
S-71660-Rev. B, 06-Aug-07
http://www.vishay.com/ppg?73009
0.01
0.1
2
1
10
- 4
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.05
0.02
10
- 3
Normalized Thermal Transient Impedance, Junction-to-Case
10
- 2
Square Wave Pulse Duration (sec)
10
- 1
1
SUD50P04-13L
Vishay Siliconix
10
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