SUP18N15-95-E3 Vishay, SUP18N15-95-E3 Datasheet

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SUP18N15-95-E3

Manufacturer Part Number
SUP18N15-95-E3
Description
TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,18A I(D),TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of SUP18N15-95-E3

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.095 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Power Dissipation
88 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71642
S-71662-Rev. B, 06-Aug-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (Free Air)
Junction-to-Case
V
DS
150
Ordering Information: SUP18N15-95
(V)
TO-220AB
Top View
G D S
0.095 at V
0.100 at V
r
N-Channel 150-V (D-S) 175 °C MOSFET
DS(on)
J
a
SUP18N15-95-E3 (Lead (Pb)-free)
= 175 °C)
a
DRAIN connected to TAB
GS
GS
(Ω)
= 10 V
= 6 V
C
I
D
17.5
= 25 °C, unless otherwise noted
18
(A)
T
T
L = 0.1 mH
T
C
C
C
= 125 °C
= 25 °C
= 25 °C
FEATURES
• TrenchFET
• 175 °C Junction Temperature
G
N-Channel MOSFET
Symbol
Symbol
T
R
J
R
V
V
E
I
I
P
, T
DM
I
AS
thJC
GS
thJA
D
S
DS
AS
D
D
®
stg
Power MOSFET
- 55 to 175
Limit
Limit
± 20
10.3
16.2
150
88
1.7
18
25
15
85
b
SUP18N15-95
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
RoHS*
COMPLIANT
mJ
°C
W
V
A
Available
1

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SUP18N15-95-E3 Summary of contents

Page 1

... DS(on) 0.095 150 0.100 TO-220AB DRAIN connected to TAB Top View Ordering Information: SUP18N15-95 SUP18N15-95-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Single Pulse Avalanche Energy a Maximum Power Dissipation ...

Page 2

... SUP18N15-95 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... D Transconductance 1500 1200 900 600 300 C rss C oss Drain-to-Source Voltage ( Capacitance Document Number: 71642 S-71662-Rev. B, 06-Aug- ° °C 125 ° iss 60 80 100 SUP18N15-95 Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0.14 0. 0.06 0.04 0.02 0. Drain Current (A) D On-Resistance vs ...

Page 4

... SUP18N15-95 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 2.4 D 2.0 1.6 1.2 0.8 0.4 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature www.vishay.com 4 75 100 125 150 175 185 180 175 170 165 160 155 150 145 - Junction Temperature (°C) J Drain-Source Voltage Breakdown vs ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71642. Document Number: 71642 S-71662-Rev. B, 06-Aug-07 125 150 175 - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case SUP18N15-95 Vishay Siliconix 100 Limited by r DS(on °C C Single Pulse 0.1 0.1 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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