SUP18N15-95-E3 Vishay, SUP18N15-95-E3 Datasheet - Page 4

• Manufacturer Part Number: SUP18N15-95-E3
• Description: TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,18A I(D),TO-220AB
• Manufacturer: Vishay

Specifications of SUP18N15-95-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.095 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 88 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUP18N15-95
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
- 50
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
= 15 A
= 10 V
0
T
J
- Junction Temperature (°C)
25
50
75
100
185
180
175
170
165
160
155
150
145
- 50
125
- 25
150
Drain-Source Voltage Breakdown
175
0
vs. Junction Temperature
T
J
- Junction Temperature (°C)
25
50
75
100
100
10
1
125
0
150
Source-Drain Diode Forward Voltage
175
V
0.3
SD
T
J
- Source-to-Drain Voltage (V)
= 150 °C
S-71662-Rev. B, 06-Aug-07
0.6
Document Number: 71642
0.9
T
J
= 25 °C
1.2