TLP3082(S.C.F) Toshiba, TLP3082(S.C.F) Datasheet

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TLP3082(S.C.F)

Manufacturer Part Number
TLP3082(S.C.F)
Description
PHOTOCOUPLER GAAS IRED & PHOTOTRIAC
Manufacturer
Toshiba
Datasheet

Specifications of TLP3082(S.C.F)

No. Of Channels
1
Input Current
20mA
Output Voltage
800V
Opto Case Style
DIP
No. Of Pins
6
Operating Temperature Range
-25°C To +85°C
Package /
RoHS Compliant
Isolation Voltage
5kV
Output Type
Phototriac
Optocoupler Output Type
Phototriac
Rohs Compliant
Yes
Office Machine
Household Use Equipment
Triac Driver
Solid State Relay
The TOSHIBA TLP3082(S) consists of a zero voltage crossing turn-on
photo-triac optically coupled to a GaAs infrared emitting diode in a six
lead plastic DIP package.
Features
(Note) When specifying the application type name for certification testing, be sure to use the standard product type
name, e.g.,
Maximum operating insulation voltage : 890Vpk
Highest permissible over voltage
Peak off-state voltage: 800V (Min.)
Trigger LED current: 10mA (Max.)
On-state current: 100mA (Max.)
Isolation voltage: 5000Vrms (Min.)
UL recognized: UL1577, file No. E67349
Option(D4) type
VDE approved: DIN EN 60747-5-2
Construction mechanical rating
Creepage distance
Clearance
Insulation thickness
(Note) When an EN60747-5-2 approved type is needed, please designate the “Option(D4)”.
TLP3082
Certificate No. 40009302
7.62 mm pitch
standard type
7.0 mm (Min.)
7.0 mm (Min.)
0.4 mm (Min.)
TOSHIBA Photocoupler GaAs IRED & Photo−Triac
TLP3082(S)
: 8000Vpk
10.16 mm pitch
TLPXXXF type
8.0 mm (Min.)
8.0 mm (Min.)
0.4 mm (Min.)
Pin configuration (top view)
3
2
1
1
ZC
Weight: 0.39 g (Typ.)
JEDEC
JEITA
TOSHIBA
6
4
1: Anode
2: Cathode
3: N.C.
4:Terminal 1
6:Terminal 2
ZC:Zero-cross Circuit
TLP3082(S)
11-7A9
2006-12-11
Unit: mm

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TLP3082(S.C.F) Summary of contents

Page 1

... TOSHIBA Photocoupler GaAs IRED & Photo−Triac Office Machine Household Use Equipment Triac Driver Solid State Relay The TOSHIBA TLP3082(S) consists of a zero voltage crossing turn-on photo-triac optically coupled to a GaAs infrared emitting diode in a six lead plastic DIP package. Features • ...

Page 2

Absolute Maximum Ratings Characteristic Forward current Forward current derating (Ta≥53°C) Peak forward current (100μs pulse, 100pps) Reverse voltage Junction temperature Off-state output terminal voltage On-state RMS current On-state current derating (Ta≥25°C) Peak on-state current (100μs pulse, 120pps) Peak nonrepetitive surge ...

Page 3

Electrical Characteristics Characteristic Forward voltage Reverse current Capacitance Peak off-state current Peak on-state voltage Holding current Critical rate of rise of off-state voltage Critical rate of rise of commutating voltage Coupled Electrical Characteristics Characteristic Trigger LED current Inhibit voltage Leakage ...

Page 4

I F ─ Ta 100 - Ambient temperature I ─ 3000 1000 500 300 100 Duty ratio D ...

Page 5

Normalized I – 1.2 1 0.5 0.3 0.1 -40 - Ambient temperature Normalized I DRM Rated DRM Ambient temperature ...

Page 6

... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...

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