TEST2600 Vishay, TEST2600 Datasheet - Page 2

• Manufacturer Part Number: TEST2600
• Description: TRANSISTOR PHOTO NPN 920NM, SIDE LOOKING
• Manufacturer: Vishay
• Type: IR Chipr

Specifications of TEST2600

• Transistor Polarity: NPN
• Wavelength Typ: 920nm
• Power Consumption: 100mW
• Viewing Angle: 60°
• No. Of Pins: 2
• Light Current: 2.5mA
• Dark Current: 100nA
• C-e Breakdown Voltage: 70V
• Sensitivity: 60 °
• Maximum Power Dissipation: 100 mW
• Maximum Dark Current: 100 nA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Package / Case: Side View Micro
• Voltage - Collector Emitter Breakdown (max): 70V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 100nA
• Wavelength: 950nm
• Power - Max: 100mW
• Mounting Type: Through Hole
• Orientation: Universal
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TEST2600
Vishay Semiconductors
Note
T
BASIC CHARACTERISTICS
T
www.vishay.com
518
amb
amb
BASIC CHARACTERISTICS
PARAMETER
Collector emitter breakdown voltage
Collector emitter dark current
Collector emitter capacitance
Collector light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Turn-on time
Turn-off time
Cut-off frequency
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
Fig. 2 - Collector Dark Current vs. Ambient Temperature
= 25 °C, unless otherwise specified
94 8249
20907
10
10
10
10
10
120
100
4
3
2
1
80
60
40
20
20
0
0
10
T
amb
T
amb
40
20
- Ambient Temperature (°C)
V
- Ambient Temperature (°C)
30
CE
= 10 V
40
60
50
For technical questions, contact: [e-mail]
60
V
V
V
S
S
S
E
E
80
70
V
Silicon NPN Phototransistor, RoHS Compliant
e
e
= 5 V, I
= 5 V, I
= 5 V, I
CE
= 1 mW/cm
= 1 mW/cm
80
TEST CONDITION
= 5 V, f = 1 MHz, E = 0
V
CE
90
I
C
C
C
C
I
V
horizontal
100
= 20 V, E = 0
C
= 5 mA, R
= 5 mA, R
= 5 mA, R
vertical
CE
= 0.1 mA
100
= 1 mA
= 5 V
2
2
, λ = 950 nm,
, λ = 950 nm,
L
L
L
= 100 Ω
= 100 Ω
= 100 Ω
SYMBOL
V
Fig. 3 - Relative Collector Current vs. Ambient Temperature
V
(BR)CEO
C
I
λ
CEO
CEsat
I
t
t
CEO
ϕ
ϕ
λ
f
ca
0.5
on
off
c
p
1
2
94 8239
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
MIN.
70
1
T
V
E
λ
amb
CE
e
20
= 1 mW/cm
= 950 nm
= 5 V
- Ambient Temperature (°C)
850 to 980
40
TYP.
± 30
± 60
920
110
2.5
1
6
6
5
2
60
Document Number: 81562
MAX.
100
0.3
80
Rev. 1.7, 08-Sep-08
100
UNIT
deg
deg
kHz
mA
nm
nm
nA
pF
µs
µs
V
V