TEST2600 Vishay, TEST2600 Datasheet - Page 4
TEST2600
Manufacturer Part Number
TEST2600
Description
TRANSISTOR PHOTO NPN 920NM, SIDE LOOKING
Manufacturer
Vishay
Type
IR Chipr
Datasheet
1.TEST2600.pdf
(5 pages)
Specifications of TEST2600
Transistor Polarity
NPN
Wavelength Typ
920nm
Power Consumption
100mW
Viewing Angle
60°
No. Of Pins
2
Light Current
2.5mA
Dark Current
100nA
C-e Breakdown Voltage
70V
Sensitivity
60 °
Maximum Power Dissipation
100 mW
Maximum Dark Current
100 nA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Package / Case
Side View Micro
Voltage - Collector Emitter Breakdown (max)
70V
Current - Collector (ic) (max)
50mA
Current - Dark (id) (max)
100nA
Wavelength
950nm
Power - Max
100mW
Mounting Type
Through Hole
Orientation
Universal
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TEST2600
Manufacturer:
VISHAY/威世
Quantity:
20 000
TEST2600
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
www.vishay.com
520
Fig. 10 - Relative Radiant Sensitivity vs. Angular Displacement
94 8274
1.0
0.9
0.8
0.7
Drawing-No.: 6.544-5242.01-4
Issue: 3; 18.04.96
95 11487
0.6
0.4
0.2
E
0°
0
For technical questions, contact: detectortechsupport@vishay.com
0.3
60°
0.2
+ 0.1
10°
Silicon NPN Phototransistor, RoHS Compliant
2.54 nom.
0.4
3.6
20°
C
0.5
0.65
± 0.15
0.6
+ 0.2
- 0.1
- 0.15
+ 0.1
30°
40°
50°
60°
70°
80°
Detector center
0.4
± 0.15
technical drawings
according to DIN
specifications
0.4
+ 0.15
1.8
2.2
Document Number: 81562
± 0.15
± 0.15
Area not plane
Rev. 1.7, 08-Sep-08