MPR031EP Freescale Semiconductor, MPR031EP Datasheet - Page 24

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MPR031EP

Manufacturer Part Number
MPR031EP
Description
Capacitance Touch Sensors PESCE DFN
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MPR031EP

Package / Case
UDFN-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Table 20. ESD and Latch-up Test Conditions
MPR03X
24
Appendix A Electrical Characteristics
A.1
This section contains electrical and timing specifications.
A.2
Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Stress beyond the
limits specified in
conditions, refer to the remaining tables in this section. This device contains circuitry protecting against damage due to high static
voltage or electrical fields; however, it is advised that normal precautions be taken to avoid application of any voltages higher
than maximum-rated voltages to this high-impedance circuit.
A.3
Normal handling precautions should be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels of static without
suffering any permanent damage. During the device qualification ESD stresses were performed for the Human Body Model
(HBM), the Machine Model (MM) and the Charge Device Model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Table 19. Absolute Maximum Ratings - Voltage (with respect to V
Human Body Model (HBM)
Machine Model (MM)
Charge Device Model (CDM)
Latch-up current at T
Supply Voltage
Input Voltage
Operating Temperature Range
Storage Temperature Range
SCL, SDA, IRQ
Introduction
Absolute Maximum Ratings
ESD and Latch-up Protection Characteristics
Table 19
Rating
A
Rating
= 85°C
may affect device reliability or cause permanent damage to the device. For functional operating
Symbol
TSG
V
T
V
DD
SG
IN
Symbol
I
V
V
V
LATCH
ESD
ESD
ESD
SS
)
V
SS
- 0.3 to V
-0.3 to +2.9
-40 to +125
-40 to +85
Value
±4000
Value
±200
±500
±100
DD
+ 0.3
Freescale Semiconductor
Unit
mA
Unit
V
V
V
°C
°C
V
V
Sensors

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