IR7393C Everlight Electronics CO., LTD, IR7393C Datasheet

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... RoHS compliant version. Descriptions EVERLIGHT’s infrared emitting diode (IR7393C high intensity diode, molded in a water clear plastic package. The device is spectrally matched with phototransistor, photodiode and infrared receive module. ...

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... Conditions--Pulse Width≦100μs and Duty≦1%. FP *2:Soldering time≦5 seconds. Everlight Electronics Co., Ltd. Device No：DIR-739-283 Symbol Rating I 100 1 -40 ~ +85 opr T -40 ~ +85 stg *2 T 260 sol P 150 d http:\\www.everlight.com Prepared date：08-26-2005 IR7393C Units ℃ ℃ ℃ mW Rev 2 Page Prepared by：JAINE TSAI ...

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... F I =20mA F I =100mA F Pulse Width≦100μs and Duty≦1% I =1A F Pulse Width≦100μs and Duty≦ =20mA F L 5.6 8.9 12.5 http:\\www.everlight.com Prepared date：08-26-2005 IR7393C Min. Typ. Max. 4.0 6 300 -- -- -- 940 1.2 1.5 -- 1.4 1 ...

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... Fig.3 Peak Emission Wavelength Ambient Temperature 980 960 940 920 900 - Everlight Electronics Co., Ltd. Device No：DIR-739-283 Fig.2 Spectral Distribution 100 50 75 100 http:\\www.everlight.com Prepared date：08-26-2005 100 Fig.4 Forward Current vs. Forward Voltage Rev 2 Prepared by：JAINE TSAI IR7393C I =20mA F Ta=25° Page ...

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... F 100 120 http:\\www.everlight.com Prepared date：08-26-2005 Fig.6 Relative Radiant Intensity vs. Angular Displacement - -10 1.0 0.9 0.8 0.7 0.6 0.4 0.2 0 0.2 0.4 0.6 Fig.8 Forward Voltage vs. Ambient Temperature(°C) 1 Rev 2 Prepared by：JAINE TSAI IR7393C =20mA 100 120 Page ...

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... Prepared date：08-26-2005 IR7393C Failure Ac/Re Judgement Criteria 0/1 ≧U×2 I 0/1 R Ee≦L×0.8 ≧U×1 0/1 U：Upper Specification Limit 0/1 L： ...

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... Prepared date：08-26-2005 CPN: Customer’s Production Number P/N : Production Number QTY: Packing Quantity AT: Ranks HUE: Peak Wavelength REF: Reference LOT No: Lot Number MADE IN TAIWAN: Production Place Tel: 886-2-2267-2000, 2267-9936 Fax: 886-2267-6244, 2267-6189, 2267-6306 http:\\www.everlight.com Rev 2 Prepared by：JAINE TSAI IR7393C Page ...