SI7925DN-T1-E3 Vishay, SI7925DN-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7925DN-T1-E3
• Description: MOSFET DUAL P-CH D-S 12V 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7925DN-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 42 mOhm @ 6.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72343
S-81544-Rev. C, 07-Jul-08
0.20
0.16
0.12
0.08
0.04
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
V
DS
Source-Drain Diode Forward Voltage
0.2
= 6.5 A
GS
On-Resistance vs. Drain Current
= 6 V
2
= 1.8 V
4
V
0.4
Q
SD
g
T
- Total Gate Charge (nC)
J
- Source-to-Drain Voltage (V)
4
I
= 150°C
D
Gate Charge
0.6
- Drain Current (A)
8
0.8
6
T
12
V
1.0
J
GS
= 25°C
8
= 2.5 V
1.2
V
16
GS
10
= 4.5 V
1.4
12
1.6
20
1500
1200
900
600
300
0.20
0.16
0.12
0.08
0.04
0.00
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
D
V
I
- 25
D
GS
= 1.2 A
= 6.5 A
C
2
= 4.5 V
rss
1
T
V
0
V
J
GS
DS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
4
25
Capacitance
2
I
C
D
50
oss
= 6.5 A
6
C
Vishay Siliconix
iss
75
3
Si7925DN
8
100
www.vishay.com
4
10
125
150
12
5
3