SI7925DN-T1-E3 Vishay, SI7925DN-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7925DN-T1-E3
• Description: MOSFET DUAL P-CH D-S 12V 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7925DN-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 42 mOhm @ 6.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si7925DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.01
- 50
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
T
J
I
- Temperature (°C)
D
25
10
= 250
Single Pulse
-3
50
µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
100
1
0.1
10
-2
* V
Safe Operating Area, Junction-to-Ambient
Limited by R
125
GS
Limited
I
D(on)
> minimum V
V
Square Wave Pulse Duration (s)
Single Pulse
150
T
DS
A
= 25 °C
- Drain-to-Source Voltage (V)
DS (on)*
BV
1
10
DSS
-1
GS
Limited
at which R
DS(on)
10
I
DM
30
25
20
15
10
1
5
0
Limited
0.001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
DC
P(t) = 10
is specified
0.01
100
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0.1
P
DM
JM
Time (s)
- T
t
A
1
= P
t
S-81544-Rev. C, 07-Jul-08
Document Number: 72343
1
2
DM
Z
thJA
thJA
100
t
t
1
2
(t)
10
= 75 °C/W
100
600
600