AO8807 Alpha & Omega Semiconductor Inc, AO8807 Datasheet - Page 3
AO8807
Manufacturer Part Number
AO8807
Description
MOSFET 2P-CH 12V 6.5A 8TSSOP
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet
1.AO8807.pdf
(5 pages)
Specifications of AO8807
Input Capacitance (ciss) @ Vds
2100pF @ 6V
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 6.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
850mV @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 4.5V
Power - Max
1.4W
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1245-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AO8807
Manufacturer:
ROHM
Quantity:
3 000
Part Number:
AO8807L
Manufacturer:
AOS/万代
Quantity:
20 000
AO8807
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
45
40
35
30
25
20
15
10
60
50
40
30
20
10
50
45
40
35
30
25
20
15
10
0
0
0
0
Figure 3: On-Resistance vs. Drain Current and
-4.5V
Figure 1: On-Region Characteristics(Note E)
2
V
Figure 5: On-Resistance vs. Gate-Source
GS
=-2.5V
4
1
2
6
Gate Voltage(Note E)
-3V
Voltage(Note E)
8
2
-V
-V
V
DS
-I
GS
GS
D
-2.5V
10
(Volts)
=-1.5V
(A)
(Volts)
4
25°C
12
V
3
V
GS
125°C
GS
=-4.5V
=-1.8V
14
V
GS
=-1.5V
6
-2V
16
I
4
D
=-6.5A
18
20
5
8
1E+01
1E+00
60
50
40
30
20
10
1.6
1.4
1.2
1.0
0.8
1E-01
1E-02
1E-03
1E-04
1E-05
0
0
0
0.0
V
DS
Figure 2: Transfer Characteristics(Note E)
Figure 6: Body-Diode Characteristics(Note E)
I
=-5V
D
125°C
25
Figure 4: On-Resistance vs. Junction
0.5
=-6.5A, V
0.2
125°C
50
I
Temperature(Note E)
D
=-6A, V
GS
1
Temperature (°C)
=-4.5V
I
D
-V
=-5.5A, V
75
0.4
-V
GS
GS
SD
1.5
(Volts)
25°C
=-2.5V
25°C
(Volts)
100
GS
I
D
0.6
=-5A, V
=-1.8V
2
125
GS
0.8
=-1.5V
2.5
150
www.aosmd.com
175
1.0
3