PT12-21B/TR8 Everlight Electronics CO., LTD, PT12-21B/TR8 Datasheet - Page 4

• Manufacturer Part Number: PT12-21B/TR8
• Description: Photodetector Transistors Infrared Phototransistor
• Manufacturer: Everlight Electronics CO., LTD

Specifications of PT12-21B/TR8

• Maximum Power Dissipation: 75 mW
• Collector- Emitter Voltage Vceo Max: 30 V
• Collector-emitter Breakdown Voltage: 30 V
• Collector-emitter Saturation Voltage: 0.4 V
• Fall Time: 15 us
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Product: Phototransistor
• Rise Time: 15 us
• Wavelength: 940 nm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electro-Optical Characteristics Curves
Fig.1Collector Power Dissipation vs.
Fig.3 Relative Collector Current vs.
Ambient Temperature
Everlight Electronics Co., Ltd.
Device No：DTT-012-079
100
80
60
40
20
160
140
120
100
Ambient Temperature
0
80
60
40
20
0
-25
0
10
0
20 30
25
2
50
40
50
75
http:\\www.everlight.com
Prepared date：07-20-2005
60
85
100
70
Irradiance
0.01
0.1
100
0.8
0.6
0.4
0.2
Fig.4 Collector Current vs.
1.0
10
0
Fig.2 Spectral Sensitivity
1
0.5
600 700
Ta=25
C
O
C
Rev 2
Prepared by：Jaine Tsai
800 900 1000
1
PT12-21B/TR8
3
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2
1100
1200
5