PT12-21B/TR8 Everlight Electronics CO., LTD, PT12-21B/TR8 Datasheet - Page 8

• Manufacturer Part Number: PT12-21B/TR8
• Description: Photodetector Transistors Infrared Phototransistor
• Manufacturer: Everlight Electronics CO., LTD

Specifications of PT12-21B/TR8

• Maximum Power Dissipation: 75 mW
• Collector- Emitter Voltage Vceo Max: 30 V
• Collector-emitter Breakdown Voltage: 30 V
• Collector-emitter Saturation Voltage: 0.4 V
• Fall Time: 15 us
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Product: Phototransistor
• Rise Time: 15 us
• Wavelength: 940 nm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Reliability Test Item And Condition
NO. Item
The reliability of products shall be satisfied with items listed below.
Confidence level：90%
LTPD：10%
1 REFLOW Soldering TEMP.：260℃±5℃
2 Temperature Cycle H : +100℃
3 Thermal Shock
4 High Temperature
5 Low Temperature
6 DC Operating Life V
7 High Temperature/
Everlight Electronics Co., Ltd.
Device No：DTT-012-079
Storage
Storage
High Humidity
Test Conditions
5secs
L : -40℃
H :+100℃
L :-10℃
TEMP.：+100℃
TEMP.：-40℃
85℃ / 85% R.H
CE
=5V
http:\\www.everlight.com
Prepared date：07-20-2005
15mins
15mins
5mins
5mins
5mins
10secs
Test Hours/
Cycles
6Mins
50Cycles
50Cycles
1000hrs
1000hrs
1000hrs
1000hrs
Sample
Sizes
22pcs
22pcs
22pcs
22pcs
22pcs
22pcs
22pcs
Rev 2
Prepared by：Jaine Tsai
Failure
Judgement
Criteria
I
L：Lower
Specification
Limit
C(ON)
PT12-21B/TR8
≦L×0.8
Page: 8 of 10
Ac/Re
0/1
0/1
0/1
0/1
0/1
0/1
0/1